RECTIFICATION AT N-N GAAS: (GA, AL) AS HETEROJUNCTIONSCHANDRA A; EASTMAN LF.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 3; PP. 90-91; BIBL. 9 REF.Article

HIGH EFFICIENCY CW TRANSFERRED-ELECTRON OSCILLATOR WITH OPTIMIZED DOPING PROFILE.KAMEI K; EASTMAN LF.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 452-459; BIBL. 17 REF.Article

DEPENDENCE OF T.E.O. EFFICIENCY ON NL PRODUCT.IP KT; EASTMAN LF.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 14; PP. 301-303; BIBL. 7 REF.Article

ELECTRIC CURRENT CONTROLLED GROWTH AND DOPING MODULATION IN GAAS LIQUID PHASE EPITAXY.LAWRENCE DJ; EASTMAN LF.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 2; PP. 267-275; BIBL. 17 REF.Article

THE LIQUID PHASE EPITAXIAL GROWTH OF HIGH PURITY GA_1-XAL_XASAMITABH CHANDRA; EASTMAN LF.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 1; PP. 211-216; BIBL. 33 REF.Article

A STUDY OF ALLOY SCATTERING IN GA_1-X AL_XASCHANDRA A; EASTMAN LF.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2669-2677; BIBL. 31 REF.Article

USE OF CURRENT CONTROLLED GA AS L.P.E. FOR OPTIMUM PROFILES IN L.S. A DIODES.LAWRENCE DJ; EASTMAN LF.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 4; PP. 77-78; BIBL. 11 REF.Article

THE GROWTH OF UNIFORM SUBMICRON GAAS LAYERS BY LIQUID PHASE EPITAXY.MORKOC H; EASTMAN LF.1976; J. ELECTROCHEM. SCI.; U.S.A.; DA. 1976; VOL. 123; NO 6; PP. 906-912; BIBL. 20 REF.Article

QUANTUM MECHANICAL REFLECTION AT TRIANGULAR "PLANAR-DOPED" POTENTIAL BARRIERS FOR TRANSISTORSAMITABH CHANDRA; EASTMAN LF.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 9165-9169; BIBL. 7 REF.Article

BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGICSHUR MS; EASTMAN LF.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 11; PP. 1677-1683; BIBL. 7 REF.Article

CURRENT-VOLTAGE CHARACTERISTICS, SMALL-SIGNAL PARAMETERS, AND SWITCHING TIMES OF GAAS FET'SSHUR MS; EASTMAN LF.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 606-611; BIBL. 16 REF.Article

NEAR BALLISTIC ELECTRON TRANSPORT IN GAAS DEVICES AT 77^OKSHUR MS; EASTMAN LF.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 1; PP. 11-18; BIBL. 9 REF.Article

I-V CHARACTERISTICS OF GAAS MESFET WITH NONUNIFORM DOPING PROFILESHUR MS; EASTMAN LF.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 455-461; BIBL. 6 REF.Article

BALLISTIC AND NEAR BALLISTIC TRANSPORT IN GAASSHUR MS; EASTMAN LF.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 8; PP. 147-148; BIBL. 6 REF.Article

PURITY OF GAAS GROWN BY LPE IN A GRAPHITE BOAT.MORKOC H; EASTMAN LF.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 36; NO 1; PP. 109-114; BIBL. 11 REF.Article

COMMENT ON "SINGLE-CARRIER SPACE-CHARGE CONTROLLED CONDUCTION VS. BALLISTIC TRANSPORT IN GAAS DEVICES AT 77^OK"SOCHA JB; EASTMAN LF.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 1; PP. 27; BIBL. 6 REF.Article

GAALAS-GAAS BALLISTIC HETEROJUNCTION BIPOLAR TRANSISTORANKRI D; EASTMAN LF.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 17; PP. 750-751; BIBL. 8 REF.Article

GAAS N⁺-P^--N⁺ BALLISTIC STRUCTURESHUR MS; EASTMAN LF.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 13; PP. 522-523; BIBL. 3 REF.Article

A STUDY OF THE CONDUCTION PROPERTIES OF A RECTIFYING NGAAS-N(GA,AL)AS HETEROFUNCTIONCHANDRA A; EASTMAN LF.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 599-603; BIBL. 12 REF.Article

FREQUENCY LIMITATIONS OF TRANSFERRED ELECTRON DEVICES RELATED TO QUALITY OF CONTACTSEASTMAN LF; SHUR MS.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 5; PP. 787-791; BIBL. 8 REF.Article

SURFACE-ORIENTED TRANSFERRED-ELECTRON DEVICESSHUR MS; EASTMAN LF.1978; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1978; VOL. 26; NO 12; PP. 1023-1028; BIBL. 18 REF.Article

ELECTRIC CURRENT CONTROLLED LIQUID PHASE EPITAXY OF GAAS ON N⁺ AND SEMI-INSULATING SUBSTRATES.LAWRENCE DJ; EASTMAN LF.1977; J. ELECTRON. MATER.; U.S.A.; DA. 1977; VOL. 6; NO 1; PP. 1-24; BIBL. 15 REF.Article

THE LIMITS ON DOPING CONCENTRATION TO FREQUENCY RATIO AS A FUNCTION OF TEMPERATURE AND DOPING PROFILE.CAMP WO JR; EASTMAN LF.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 205-214; BIBL. 6 REF.Conference Paper

LIQUID PHASE EPITAXIAL GROWTH AND CHARACTERIZATION OF HIGH PURITY LATTICE MATCHED GA_XIN_1-XAS ON <111>B INPOLIVER JD JR; EASTMAN LF.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 4; PP. 693-712; BIBL. 25 REF.Article

AN ANALYSIS OF GAAS LPE GROWTH METHODS BY A DIFFUSION LIMITED GROWTH MODEL.LONG SI; BALLANTYNE JM; EASTMAN LF et al.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 32; NO 1; PP. 95-100; BIBL. 22 REF.Article